DDR3 SODIMM

产品特色

Small Outline Dual In-line Memory Module

Fully Tested and Optimized for Stability and Performance

Uses Original IC to Meet Strict Industrial Standards

JEDEC Standard 1.5V (1.425V~1.575V) & 1.35V (1.28V~1.45V)

Operating Environment : 0°C ~ 85°C

RoHS Compliance

CE/FCC Certification

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介绍:

DDR3 SODIMM是款设计精巧的记忆模块,能够完美符合任何嵌入式、安防监控及自动化应用。

此模块符合JEDEC相关标准,提供1GB、2GB、4GB、8GB及16GB的容量,并支持1066MT/s,13333MT/s,1600MT/s及1866MT/s的传输速度。

 

规格:

Interface

DDR3

Form Factor

SODIMM

Data Rate

1066 MT/s, 1333 MT/s, 1600 MT/s, 1866 MT/s

Capacity

1GB, 2GB, 4GB, 8GB

Function

Non-ECC Unbuffered Memory

Pin Number

204pin

Width

64Bits

Voltage

1.5V, 1.35V

PCB Height

1.18 Inches

Operating Temperature

0°C to 85°C

 

产品料号:

Density

Component

Composition

Part Number

Rank

Voltage

Description

1GB

128Mx16

M3S0-1GSWFCQE

1Rx16

1.5V/1.35V

DDR3 1866 SODIMM

1GB

128Mx16

M3S0-1GMWFCQE

1Rx16

1.5V/1.35V

DDR3 1866 SODIMM

2GB

256Mx8

M3S0-2GSJCCQE

1Rx8

1.5V/1.35V

DDR3 1866 SODIMM

2GB

256Mx8

M3S0-2GMJCCQE

1Rx8

1.5V/1.35V

DDR3 1866 SODIMM

2GB

256Mx16

M3S0-2GMVFCQE

1Rx16

1.5V/1.35V

DDR3 1866 SODIMM

2GB

256Mx16

M3S0-2GMVFCQE

1Rx16

1.5V/1.35V

DDR3 1866 SODIMM

4GB

256Mx16

M3S0-4GSV0CQE

2Rx16

1.5V/1.35V

DDR3 1866 SODIMM

4GB

256Mx16

M3S0-4GMV0CQE

2Rx16

1.5V/1.35V

DDR3 1866 SODIMM

4GB

256Mx8

M3S0-4GSJDCQE

2Rx8

1.5V/1.35V

DDR3 1866 SODIMM

4GB

256Mx8

M3S0-4GMJDCQE

2Rx8

1.5V/1.35V

DDR3 1866 SODIMM

4GB

512Mx8

M3S0-4GSSCCQE

1Rx8

1.5V/1.35V

DDR3 1866 SODIMM

4GB

512Mx8

M3S0-4GMSCCQE

1Rx8

1.5V/1.35V

DDR3 1866 SODIMM

8GB

512Mx8

M3S0-8GSSDCQE

2Rx8

1.5V/1.35V

DDR3 1866 SODIMM

8GB

512Mx8

M3S0-8GMSDCQE

2Rx8

1.5V/1.35V

DDR3 1866 SODIMM